收藏本站
Typical Performance Characteristics
Figure 1. On-Region Characteristics
V GS
Figure 2. Transfer Characteristics
Top :
15.0 V
10.0 V
8.0 V
10
10
1
7.0 V
6.5 V
1
150 C
6.0 V
Bottom : 5.5 V
o
10
10
25 C
-55 C
10
2. T C = 25 C
0
-1
* Notes :
1. 250 μ s Pulse Test
o
0
o
o
* Note
1. V DS = 40V
2. 250 μ s Pulse Test
10
10
10
10
-1
0
1
-1
2
4
6
8
10
V DS , Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
V GS , Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
10
3.0
2.5
1
150 C
2.0
V GS = 10V
o
10
25 C
-55 C
1.5
V GS = 20V
0
o
o
* Note : T J = 25 C
1.0
o
* Note
1. V DS = 40V
2. 250 μ s Pulse Test
10
0.5
0.0
2.5
5.0
7.5
10.0
12.5
15.0
-1
2
4
6
8
10
I D , Drain Current [A]
Figure 5. Capacitance Characteristics
1500
C iss = C gs + C gd (C ds = shorted)
C oss = C ds + C gd
12
V GS , Gate-Source Voltage [V]
Figure 6. Gate Charge Characteristics
V DS = 100V
C rss = C gd
* Notes :
10
V DS = 250V
V DS = 400V
1000
500
C oss
C iss
C rss
1. V GS = 0 V
2. f = 1 MHz
8
6
4
2
* Note : I D = 4.6A
10
10
0
0
1
0
0
5
10
15
V DS , Drain-Source Voltage [V]
Q G , Total Gate Charge [nC]
?2008 Fairchild Semiconductor Corporation
FCD5N60 Rev. C1
3
www.fairchildsemi.com
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
FCD7N60TF MOSFET N-CH 600V 7A DPAK
FCD9N60NTM MOSFET N-CH 600V 9A DPAK
FCH20N60 MOSFET N-CH 600V 20A TO-247
FCH22N60N MOSFET N-CH 600V 22A TO-247
FCH25N60N MOSFET N-CH 600V 25A TO-247
FCH35N60 MOSFET N-CH 600V 35A TO-247
FCH47N60_F133 MOSFET N-CH 600V 47A TO-247
FCH47N60F_F133 MOSFET N-CH 600V 47A TO-247
相关代理商/技术参数
FCD5N60TM 功能描述:MOSFET 650V SUPERFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FCD5N60TM_WS 功能描述:MOSFET 600V 4.6A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FCD-600GS 制造商:Enhance Technology 功能描述:1 X 600GB 15K SAS DRIVE - Bulk
FCD600N60Z 功能描述:MOSFET 600V N-Channel MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FCD-61414 制造商:QUEST TECHNOLOGY 功能描述:RACEWAY, 1/2 IN, WHITE, CEILING DROP 制造商:GC Electronics 功能描述:Cable Accessories Ceiling Drop White Box
FCD-61421 制造商:GC Electronics 功能描述:
FCD-61424 制造商:QUEST TECHNOLOGY 功能描述:RACEWAY, 1/2 IN, BEIGE, CEILING DROP 制造商:GC Electronics 功能描述:Cable Accessories Ceiling Drop Beige Box
FCD-61484 制造商:GC Electronics 功能描述:Cable Accessories Ceiling Drop Electric Ivory Box